Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Perpendicular Magnetic Anisotropy for CoFeBZr/MgO

Full metadata record
DC Field Value Language
dc.contributor.authorKil, Joon Pyo-
dc.contributor.authorSuh, Dong Ik-
dc.contributor.authorBae, Gi Yoon-
dc.contributor.authorChoi, Won Joon-
dc.contributor.authorKim, Guk Cheon-
dc.contributor.authorNoh, Seung Mo-
dc.contributor.authorPark, Wanjun-
dc.date.accessioned2022-07-15T20:23:10Z-
dc.date.available2022-07-15T20:23:10Z-
dc.date.created2021-05-12-
dc.date.issued2015-11-
dc.identifier.issn0018-9464-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156001-
dc.description.abstractWe present the effects of Zr insertion (5%) in Co(65)Fe(20)B(10) on perpendicular magnetic anisotropy due to interfacial magnetization with MgO. Perpendicular magnetization is successfully formed with a stalking structure of Ta/CoFeBZr/MgO. The thickness margin for crossover of perpendicular and in-plane magnetization is increased to 1.52 nm with an enhancement of surface anisotropy energy because of reduced thickness dependence. The Gilbert damping parameter is determined to be as low as 0.004 based on the line width of ferromagnetic resonance. Moreover, the maximum effective anisotropy energy (K-eff) was 1.63 Merg/cm(3) for CoFeBZr.-
dc.language영어-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titlePerpendicular Magnetic Anisotropy for CoFeBZr/MgO-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, Wanjun-
dc.identifier.doi10.1109/TMAG.2015.2441754-
dc.identifier.scopusid2-s2.0-84946206701-
dc.identifier.wosid000364770500341-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON MAGNETICS, v.51, no.11, pp.1 - 4-
dc.relation.isPartOfIEEE TRANSACTIONS ON MAGNETICS-
dc.citation.titleIEEE TRANSACTIONS ON MAGNETICS-
dc.citation.volume51-
dc.citation.number11-
dc.citation.startPage1-
dc.citation.endPage4-
dc.type.rimsART-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.subject.keywordPlusTUNNEL-JUNCTIONS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorAnisotropy energy-
dc.subject.keywordAuthorCoFeBZr-
dc.subject.keywordAuthordamping constant-
dc.subject.keywordAuthormagnetic tunnel junction (MTJ)-
dc.subject.keywordAuthorperpendicular magnetic anisotropy (PMA)-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7118210-
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Park, Wan jun photo

Park, Wan jun
COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE