Visible-light phototransistors based on InGaZnO and silver nanoparticles
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, Jiin | - |
dc.contributor.author | Shin, Seung Won | - |
dc.contributor.author | Lee, Kwang-Ho | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Kang, Seong Jun | - |
dc.date.accessioned | 2022-07-15T20:23:54Z | - |
dc.date.available | 2022-07-15T20:23:54Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156010 | - |
dc.description.abstract | Visible-light phototransistors were fabricated using wide-bandgap indium gallium zinc oxide (IGZO) and silver (Ag) nanoparticles (NPs). A bottom gate made of thin film transistors (TFTs) was fabricated with an amorphous IGZO film as the active channel. Ag NPs were then formed on the surface of the active channel region to be used as a visible-light absorption layer. The prepared Ag NPs were highly absorptive in the wavelength range of 450-600 nm, due to the plasmon effect. A detailed study of photoresponsivity and external quantum efficiency indicated that the TFTs with Ag NPs induced a large photocurrent upon illumination by visible light on the active region, while the TFTs without Ag NPs did not. This result indicates the presence of coupling between the localized plasmons and electrical carriers on the IGZO TFTs with Ag NPs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | A V S AMER INST PHYSICS | - |
dc.title | Visible-light phototransistors based on InGaZnO and silver nanoparticles | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1116/1.4936113 | - |
dc.identifier.scopusid | 2-s2.0-84948393686 | - |
dc.identifier.wosid | 000366055600064 | - |
dc.identifier.bibliographicCitation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.33, no.6, pp.1 - 5 | - |
dc.relation.isPartOf | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.title | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.citation.volume | 33 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | SENSOR | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | GAP | - |
dc.identifier.url | https://avs.scitation.org/doi/10.1116/1.4936113 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.