Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt](n) lower synthetic-antiferromagnetic layer
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Seung-Eun | - |
| dc.contributor.author | Shim, Tae-Hun | - |
| dc.contributor.author | Park, Jea-Gun | - |
| dc.date.accessioned | 2022-07-15T20:25:50Z | - |
| dc.date.available | 2022-07-15T20:25:50Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2015-11 | - |
| dc.identifier.issn | 0957-4484 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156034 | - |
| dc.description.abstract | We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt](n) lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H-ex) of 1.4 kOe at an ex situ annealing temperature of >350 degrees C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t(bcc)), i.e., the TMR ratio peaks at t(bcc) = 0.6 nm. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt](n) lower synthetic-antiferromagnetic layer | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
| dc.identifier.doi | 10.1088/0957-4484/26/47/475705 | - |
| dc.identifier.scopusid | 2-s2.0-84947081055 | - |
| dc.identifier.wosid | 000366209100012 | - |
| dc.identifier.bibliographicCitation | NANOTECHNOLOGY, v.26, no.47, pp.1 - 7 | - |
| dc.relation.isPartOf | NANOTECHNOLOGY | - |
| dc.citation.title | NANOTECHNOLOGY | - |
| dc.citation.volume | 26 | - |
| dc.citation.number | 47 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 7 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | MAGNETORESISTANCE | - |
| dc.subject.keywordAuthor | magnetic-tunnel-junction | - |
| dc.subject.keywordAuthor | perpendicular-spin-transfer-torque-magnetic-random-access-memory | - |
| dc.subject.keywordAuthor | synthetic-antiferromagnetic | - |
| dc.subject.keywordAuthor | tunneling magneto-resistance ratio | - |
| dc.subject.keywordAuthor | exchange field | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.1088/0957-4484/26/47/475705 | - |
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Jea Gun
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)