Effects of Plasma Treatment on the Electrical Properties of AlGaN/GaN Schottky Diodes with Graphene/Ni/Au Electrodes
- Authors
- Han, Sanghoo; Cho, Inje; Kim, Hyung; Mageshwari, Kandhasamy; Park, Jinsub
- Issue Date
- Sep-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- AlGaN/GaN; Schottky Diodes; Ohmic Contact; Graphene
- Citation
- NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.7, no.9, pp.708 - 712
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOSCIENCE AND NANOTECHNOLOGY LETTERS
- Volume
- 7
- Number
- 9
- Start Page
- 708
- End Page
- 712
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156444
- DOI
- 10.1166/nnl.2015.2015
- ISSN
- 1941-4900
- Abstract
- We investigated the structural and electrical characteristics of graphene after O-2 plasma treatment and H-2 annealing, and we further studied the effects of these treatments on the device performance of AlGaN/GaN Schottky diodes. Raman spectroscopy revealed that increasing O-2 plasma power during treatment enhanced the D-band to G-band intensity ratio. Atomic force microscopy and X-ray photoelectron spectroscopy revealed variation in surface morphology and a shift in carbon and oxygen binding energies, respectively, which correlated an increase in the sheet resistance of graphene. The current-voltage (I-V) characteristics of AlGaN/GaN Schottky diodes demonstrated degradation of electrical properties after O-2 plasma treatment. After H-2 annealing, the I-V curves of Schottky diodes recovered due to improvement in the structural and electrical properties of graphene damaged during O-2 plasma treatment.
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