One-Pot Synthesis of h-BN Fullerenes Usinsg a Graphene Oxide Template
- Authors
- Kim, Sang Sub; Van Khai, Tran; Kwon, Yong Jung; Katoch, Akash; Wu, Ping; Kim, Hyoun Woo
- Issue Date
- Sep-2015
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- semiconductors; fullerenes; chemical synthesis; transmission electron microscopy (TEM); raman spectroscopy
- Citation
- METALS AND MATERIALS INTERNATIONAL, v.21, no.5, pp.950 - 955
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- METALS AND MATERIALS INTERNATIONAL
- Volume
- 21
- Number
- 5
- Start Page
- 950
- End Page
- 955
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156447
- DOI
- 10.1007/s12540-015-5043-0
- ISSN
- 1598-9623
- Abstract
- Hexagonal-boron nitride (h-BN) fullerenes were synthesized from a graphene oxide (GO) template by simultaneously heating the GO and B2O3 in the presence of NH3 gas. Transmission electron microscopy (TEM) observations revealed that a considerable amount of product had a fullerene-like nanostructure. Typical BN fullerenes have a polyhedral shape, being hollow nanocages. Lattice-resolved TEM and X-ray diffraction consistently demonstrated the formation of h-BN fullerenes. The FTIR spectrum exhibited absorption bands at approximately 800 and 1378 cm(-1), which were related to the h-BN structure. The Raman spectra exhibited peaks at 1368 and 1399 cm(-1), which can be related to BN sheets and BN fullerenes, respectively. The photoluminescence spectrum of the h-BN fullerenes taken at 8 K exhibited intense white-light emission. To reveal the origin of the broad emission band, which could be a superimposition of several peaks, we used a deconvolution procedure based on Gaussian functions. We proposed a growth mechanism of the h-BN fullerenes and verified it with a thermodynamic calculation. This work provides a cost-effective approach to synthesize fullerene-type boron nitride on a production scale.
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