Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Seung-Hwan | - |
dc.contributor.author | Kim, Gwang-Sik | - |
dc.contributor.author | Kim, Jeong-Kyu | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.contributor.author | Shin, Changhwan | - |
dc.contributor.author | Choi, Changhwan | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2022-07-15T21:09:10Z | - |
dc.date.available | 2022-07-15T21:09:10Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-09 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156457 | - |
dc.description.abstract | We demonstrate the use of germanium passivation in conjunction with a ZnO interlayer in a metal-interlayer-semiconductor structure in a source/drain (S/D) contact. The Fermi-level pinning problem resulting in the large contact resistances in S/D contacts is effectively alleviated by inserting a thin Ge passivation layer and a ZnO interlayer, passivating the GaAs surface and reducing the metal-induced gap states on the GaAs surface, respectively. The specific contact resistivity for the Ti/ZnO/Ge/n-GaAs (similar to 2 x 10(18) cm(-3)) structure exhibits a similar to 1660x reduction compared with that of a Ti/n-GaAs structure. These results suggest that the proposed structure shows promise as a nonalloyed ohmic contact in high-electron-mobility transistors. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Fermi-Level Unpinning Using a Ge-Passivated Metal-Interlayer-Semiconductor Structure for Non-Alloyed Ohmic Contact of High-Electron-Mobility Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1109/LED.2015.2453479 | - |
dc.identifier.scopusid | 2-s2.0-84940385435 | - |
dc.identifier.wosid | 000360273900004 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.36, no.9, pp.884 - 886 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 36 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 884 | - |
dc.citation.endPage | 886 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | Electric contactors | - |
dc.subject.keywordPlus | Electron mobility | - |
dc.subject.keywordPlus | Fermi level | - |
dc.subject.keywordPlus | Gallium arsenide | - |
dc.subject.keywordPlus | Germanium | - |
dc.subject.keywordPlus | Ohmic contacts | - |
dc.subject.keywordPlus | Passivation | - |
dc.subject.keywordPlus | Semiconducting gallium | - |
dc.subject.keywordPlus | Transistors | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | High electron mobility transistors | - |
dc.subject.keywordPlus | Fermi level pinning | - |
dc.subject.keywordPlus | Fermi-level unpinning | - |
dc.subject.keywordPlus | Metal interlayers | - |
dc.subject.keywordPlus | Metal-induced gap state | - |
dc.subject.keywordPlus | Nonalloyed ohmic contact | - |
dc.subject.keywordPlus | Passivation layer | - |
dc.subject.keywordPlus | Semiconductor structure | - |
dc.subject.keywordPlus | Specific contact resistivity | - |
dc.subject.keywordAuthor | Fermi level unpinning | - |
dc.subject.keywordAuthor | gallium arsenide | - |
dc.subject.keywordAuthor | germanium | - |
dc.subject.keywordAuthor | specific contact resistivity | - |
dc.subject.keywordAuthor | passivation | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/7151781 | - |
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