All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bae, Yoon Cheol | - |
dc.contributor.author | Lee, Ah Rahm | - |
dc.contributor.author | Baek, Gwang Ho | - |
dc.contributor.author | Chung, Je Bock | - |
dc.contributor.author | Kim, Tae Yoon | - |
dc.contributor.author | Park, Jea Gun | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-07-15T21:49:07Z | - |
dc.date.available | 2022-07-15T21:49:07Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-08 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/156689 | - |
dc.description.abstract | Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea Gun | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1038/srep13362 | - |
dc.identifier.scopusid | 2-s2.0-84939627654 | - |
dc.identifier.wosid | 000359779700001 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.5, pp.1 - 11 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 5 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 11 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | HIGH-CURRENT-DENSITY | - |
dc.subject.keywordPlus | THIN-FILM | - |
dc.subject.keywordPlus | RESISTIVE SWITCHES | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | STORAGE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DIODES | - |
dc.identifier.url | https://www.nature.com/articles/srep13362 | - |
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