Optically excited threshold switching synapse characteristics on nitrogen-doped graphene oxide quantum dots (N-GOQDs)
DC Field | Value | Language |
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dc.contributor.author | Ali, Mumtaz | - |
dc.contributor.author | Sokolov, Andrey | - |
dc.contributor.author | Ko, Min Jae | - |
dc.contributor.author | Choi, Changhwan | - |
dc.date.accessioned | 2021-07-30T04:50:25Z | - |
dc.date.available | 2021-07-30T04:50:25Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2021-02 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1567 | - |
dc.description.abstract | Carbon-based organic material such as nitrogen-doped graphene oxide quantum dots (N-GOQDs) is a new-class material with unique biocompatible, high chemical inertness, and elevated photoluminescence properties. Two-terminal diffusive memristors can faithfully replicate biological synapse function via mutual similarities of in-/out-diffusion of Ag⁺ ions with biological Ca²⁺ migration dynamics for neural network applications. Inspired by hetero-plasticity phenomenon, in which Ca²⁺ dynamics can also be tuned by the 3rd counterpart - neuromodulatory axon, in this study, using an ultra-violet light source, we develop N-GOQDs based diffusive memristor that performs light-modulated synaptic behaviors. Specifically, photo-sensitive N-GOQDs ionic conductor shows n-pi* electron transitions under UV excitation; yet, nitrogen-doping further facilitates the electron transitions, giving out additional conductance induced by light. Further, we demonstrate endurable threshold resistive switching (TS) behavior based on Ag⁺ ions migration and its variety of facilitations via assisted UV illumination. The enhancement of post-synaptic current under assisted UV light, as well as the light stimulated transition from short-to long-term memory potentiation have been achieved. These findings are believed to be a step forward for the realization of higher bandwidth synapse modulation as future hardware-based neural network applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Optically excited threshold switching synapse characteristics on nitrogen-doped graphene oxide quantum dots (N-GOQDs) | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1016/j.jallcom.2020.157514 | - |
dc.identifier.scopusid | 2-s2.0-85092443828 | - |
dc.identifier.wosid | 000601013200053 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.855, no.2, pp.1 - 14 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 855 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 14 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | LONG-TERM POTENTIATION | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | PLASTICITY | - |
dc.subject.keywordPlus | NETWORKS | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | ENERGY | - |
dc.subject.keywordAuthor | Graphene oxide | - |
dc.subject.keywordAuthor | Light stimulation | - |
dc.subject.keywordAuthor | Diffusive memristor | - |
dc.subject.keywordAuthor | Threshold switching | - |
dc.subject.keywordAuthor | Synapse device | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925838820338780?via%3Dihub | - |
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