Effect of the concentration of the poly(3-hexylthiophene) on the electrical characteristics of diode rectifiable devices
DC Field | Value | Language |
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dc.contributor.author | Liu, Jun Ting | - |
dc.contributor.author | Lee, Nam Hyun | - |
dc.contributor.author | Kim, Yuna | - |
dc.contributor.author | Oh, Dohyun | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2022-07-15T22:35:12Z | - |
dc.date.available | 2022-07-15T22:35:12Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157111 | - |
dc.description.abstract | The effect of the concentration of poly(3-hexylthiophene) (P3HT) on the electrical characteristics of diode rectifiable devices fabricated utilizing the P3HT was investigated. Atomic force microscopy images showed that the root-mean-square surface roughness of the P3HT thin films decreased with decreasing P3HT concentration. The current-voltage (I-V) characteristics of the Au/P3HT layer/indium-tin-oxide-coated glass devices showed resistance switchability. The I-V characteristics of the devices showed that the ON current at the same voltage decreased with increasing concentration and that the operating voltage of the device with a larger P3HT concentration was larger than that of the device with a smaller P3HT concentration. The diode rectifiable mode of the devices transformed from the Ohmic into the space-charge-limited current modes with increasing applied voltage. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effect of the concentration of the poly(3-hexylthiophene) on the electrical characteristics of diode rectifiable devices | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.3938/jkps.66.1868 | - |
dc.identifier.scopusid | 2-s2.0-84937239412 | - |
dc.identifier.wosid | 000357675100013 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.12, pp.1868 - 1871 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 66 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 1868 | - |
dc.citation.endPage | 1871 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART002002638 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | INK | - |
dc.subject.keywordAuthor | P3HT | - |
dc.subject.keywordAuthor | Concentration | - |
dc.subject.keywordAuthor | Resistance switchable device | - |
dc.subject.keywordAuthor | Diode rectifiable mode | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.66.1868 | - |
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