Effect of the concentration of the poly(3-hexylthiophene) on the electrical characteristics of diode rectifiable devices
- Authors
- Liu, Jun Ting; Lee, Nam Hyun; Kim, Yuna; Oh, Dohyun; Kim, Tae Whan
- Issue Date
- Jun-2015
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- P3HT; Concentration; Resistance switchable device; Diode rectifiable mode
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.12, pp.1868 - 1871
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 66
- Number
- 12
- Start Page
- 1868
- End Page
- 1871
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157111
- DOI
- 10.3938/jkps.66.1868
- ISSN
- 0374-4884
- Abstract
- The effect of the concentration of poly(3-hexylthiophene) (P3HT) on the electrical characteristics of diode rectifiable devices fabricated utilizing the P3HT was investigated. Atomic force microscopy images showed that the root-mean-square surface roughness of the P3HT thin films decreased with decreasing P3HT concentration. The current-voltage (I-V) characteristics of the Au/P3HT layer/indium-tin-oxide-coated glass devices showed resistance switchability. The I-V characteristics of the devices showed that the ON current at the same voltage decreased with increasing concentration and that the operating voltage of the device with a larger P3HT concentration was larger than that of the device with a smaller P3HT concentration. The diode rectifiable mode of the devices transformed from the Ohmic into the space-charge-limited current modes with increasing applied voltage.
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