Comparative studies of ZnON and ZnO thin film transistors fabricated by DC reactive sputtering method
DC Field | Value | Language |
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dc.contributor.author | Ok, Kyung-Chul | - |
dc.contributor.author | Jeong, Hyun-Jun | - |
dc.contributor.author | Lee, Hyun-Mo | - |
dc.contributor.author | Kim, Hyun-Suk | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-15T22:45:27Z | - |
dc.date.available | 2022-07-15T22:45:27Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2015-06 | - |
dc.identifier.issn | 0097-966X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157152 | - |
dc.description.abstract | DC reactive sputtered ZnO and ZnON thin film transistors (TFTs) was fabricated in order to investigate the role of nitrogen element in the ZnO matrix. After low vacuum annealing at 25 °C, ZnON TFTs exhibited superior device performances (Vth = -0.16V, μsat, = 40.87cm2/Vs and SS = 77V/decade),comparing with ZnO TFT's performance (Vlh = 3.28V, μsat = 0.99 cm2/Vs and SS = 1.22 V/decade) under vacuum probe condition (10-3 torr). The physical and electronic structure was analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding status was also analyzed by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive spurring can suppress the crystal growth and enhance electron mobility due to Zn-N bonding. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Blackwell Publishing Ltd | - |
dc.title | Comparative studies of ZnON and ZnO thin film transistors fabricated by DC reactive sputtering method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1002/sdtp.10036 | - |
dc.identifier.scopusid | 2-s2.0-84962763329 | - |
dc.identifier.bibliographicCitation | Digest of Technical Papers - SID International Symposium, v.46, no.Book 3, pp.1155 - 1157 | - |
dc.relation.isPartOf | Digest of Technical Papers - SID International Symposium | - |
dc.citation.title | Digest of Technical Papers - SID International Symposium | - |
dc.citation.volume | 46 | - |
dc.citation.number | Book 3 | - |
dc.citation.startPage | 1155 | - |
dc.citation.endPage | 1157 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Chemical analysis | - |
dc.subject.keywordPlus | Chemical bonds | - |
dc.subject.keywordPlus | Electronic structure | - |
dc.subject.keywordPlus | Fabrication | - |
dc.subject.keywordPlus | II-VI semiconductors | - |
dc.subject.keywordPlus | Nitrogen | - |
dc.subject.keywordPlus | Reactive sputtering | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | X ray absorption spectroscopy | - |
dc.subject.keywordPlus | X ray photoelectron spectroscopy | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Chemical bondings | - |
dc.subject.keywordPlus | Comparative studies | - |
dc.subject.keywordPlus | DC reactive sputtering | - |
dc.subject.keywordPlus | Device performance | - |
dc.subject.keywordPlus | Nitrogen incorporation | - |
dc.subject.keywordPlus | Thin-film transistor (TFTs) | - |
dc.subject.keywordPlus | ZnO thin film | - |
dc.subject.keywordPlus | Znon | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordAuthor | Reactive sputtering | - |
dc.subject.keywordAuthor | Thin film transistors | - |
dc.subject.keywordAuthor | Znon | - |
dc.identifier.url | https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.10036 | - |
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