Low Temperature Processed InGaZnO Oxide Thin Film Transistor Using Ultra-Violet Irradiation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Sung Haeung | - |
dc.contributor.author | Choi, Minjun | - |
dc.contributor.author | Chung, Kwun-bum | - |
dc.contributor.author | Park, Jin Seong | - |
dc.date.accessioned | 2022-07-15T22:59:26Z | - |
dc.date.available | 2022-07-15T22:59:26Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-05 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157321 | - |
dc.description.abstract | Device performance and bias stability of InGaZnO (IGZO) thin film transistors (TFTs) were investigated as a function of post-treatment with the combination of ultra-violet (UV) irradiation and thermal annealing. Under low temperature annealing at 150 degrees C after UV irradiation, the device performance and bias stability of IGZO TFTs were enhanced with field effect mobility of 10.14 cm(2)/Vs and Delta V-th below 0.5 V. The electrical characteristics of IGZO TFTs improved without a change in the physical structure and the origin of enhanced device performance can be explained by the changes of the oxygen coordination and the evolution of the electronic structures, such as the band edge states and band alignment of the Fermi level within the bandgap. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Low Temperature Processed InGaZnO Oxide Thin Film Transistor Using Ultra-Violet Irradiation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin Seong | - |
dc.identifier.doi | 10.1007/s13391-015-4442-1 | - |
dc.identifier.scopusid | 2-s2.0-84930661100 | - |
dc.identifier.wosid | 000354828100005 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.11, no.3, pp.360 - 365 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 11 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 360 | - |
dc.citation.endPage | 365 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001990861 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | IMPROVEMENT | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordPlus | LASER | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordAuthor | oxide thin film transistor | - |
dc.subject.keywordAuthor | ultra-violet irradiation | - |
dc.subject.keywordAuthor | low temperature process | - |
dc.subject.keywordAuthor | electronic structure | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s13391-015-4442-1 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.