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A Single Magnetic Tunnel Junction Representing the Basic Logic Functions-NAND, NOR, and IMP

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dc.contributor.authorSuh, Dong Ik-
dc.contributor.authorKil, Joon Pyo-
dc.contributor.authorKim, Kee Won-
dc.contributor.authorKim, Kwang Seok-
dc.contributor.authorPark, Wanjun-
dc.date.accessioned2022-07-15T23:36:18Z-
dc.date.available2022-07-15T23:36:18Z-
dc.date.issued2015-04-
dc.identifier.issn0741-3106-
dc.identifier.issn1558-0563-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157573-
dc.description.abstractWe propose a two-input configuration of a magnetic tunnel junction (MTJ) for use as a programmable logic element. The MTJ intrinsically performs four logic functions-NAND, NOR, IMP, and NIMP-based on two physically independent inputs whose values are determined by magnetic field and the voltage bias. By applying the surface magnetoelectric effect, four distinct input states are determined to perform these logic operations through switching of the MTJ. With predetermined logic inputs, a single MTJ can serve as a programmable logic gate that represents all fundamental logic functions.-
dc.format.extent3-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleA Single Magnetic Tunnel Junction Representing the Basic Logic Functions-NAND, NOR, and IMP-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/LED.2015.2406881-
dc.identifier.scopusid2-s2.0-84961291343-
dc.identifier.wosid000351743900038-
dc.identifier.bibliographicCitationIEEE Electron Device Letters, v.36, no.4, pp 402 - 404-
dc.citation.titleIEEE Electron Device Letters-
dc.citation.volume36-
dc.citation.number4-
dc.citation.startPage402-
dc.citation.endPage404-
dc.type.docTypeArticle-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClasssci-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusMagnetoelectric effects-
dc.subject.keywordPlusTunnel junctions-
dc.subject.keywordAuthorMagnetic tunnel junction-
dc.subject.keywordAuthorBoolean logic-
dc.subject.keywordAuthormagnetoelectric effect-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7047800-
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