Cited 0 time in
A Single Magnetic Tunnel Junction Representing the Basic Logic Functions-NAND, NOR, and IMP
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Suh, Dong Ik | - |
| dc.contributor.author | Kil, Joon Pyo | - |
| dc.contributor.author | Kim, Kee Won | - |
| dc.contributor.author | Kim, Kwang Seok | - |
| dc.contributor.author | Park, Wanjun | - |
| dc.date.accessioned | 2022-07-15T23:36:18Z | - |
| dc.date.available | 2022-07-15T23:36:18Z | - |
| dc.date.issued | 2015-04 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.issn | 1558-0563 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157573 | - |
| dc.description.abstract | We propose a two-input configuration of a magnetic tunnel junction (MTJ) for use as a programmable logic element. The MTJ intrinsically performs four logic functions-NAND, NOR, IMP, and NIMP-based on two physically independent inputs whose values are determined by magnetic field and the voltage bias. By applying the surface magnetoelectric effect, four distinct input states are determined to perform these logic operations through switching of the MTJ. With predetermined logic inputs, a single MTJ can serve as a programmable logic gate that represents all fundamental logic functions. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | A Single Magnetic Tunnel Junction Representing the Basic Logic Functions-NAND, NOR, and IMP | - |
| dc.type | Article | - |
| dc.publisher.location | 미국 | - |
| dc.identifier.doi | 10.1109/LED.2015.2406881 | - |
| dc.identifier.scopusid | 2-s2.0-84961291343 | - |
| dc.identifier.wosid | 000351743900038 | - |
| dc.identifier.bibliographicCitation | IEEE Electron Device Letters, v.36, no.4, pp 402 - 404 | - |
| dc.citation.title | IEEE Electron Device Letters | - |
| dc.citation.volume | 36 | - |
| dc.citation.number | 4 | - |
| dc.citation.startPage | 402 | - |
| dc.citation.endPage | 404 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordPlus | Magnetoelectric effects | - |
| dc.subject.keywordPlus | Tunnel junctions | - |
| dc.subject.keywordAuthor | Magnetic tunnel junction | - |
| dc.subject.keywordAuthor | Boolean logic | - |
| dc.subject.keywordAuthor | magnetoelectric effect | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/7047800 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366
COPYRIGHT © 2024 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.
