Effects of growth temperature on surface morphology of InP grown on patterned Si(001) substrates

Abstract

We report on the selective area growth (SAG) of high quality le layers on patterned (0 0 1)Si substrates at various growth temperatures by metal organic chemical vapor deposition. Thin le and GaP layers were used as intermediate buffer layers between patterned Si surface and high temperature (HT) InP layer. The growth temperatures of HT InP layers on patterned substrate had strong effect on their growth behaviors including surface morphology. The SAG InP layers grown at 650 degrees C and 550 degrees C exhibited the typical {1 1 1} facets and the smooth (0 0 1) Lop surface, respectively. Anti-phase domain boundaries and defects were trapped by lateral sidewalk of the etched Si substrate. Through the defect necking effect within the etched Si surface, defect-free lnP layers with atomically smooth surface were obtained at a growth temperature of 550 degrees C. (C) 2015 Elsevier B.V. All rights reserved.