Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing
DC Field | Value | Language |
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dc.contributor.author | Jeong, Yong Jin | - |
dc.contributor.author | Yun, Dong-Jin | - |
dc.contributor.author | Jang, Jaeyoung | - |
dc.contributor.author | Park, Seonuk | - |
dc.contributor.author | An, Tae Kyu | - |
dc.contributor.author | Kim, Lae Ho | - |
dc.contributor.author | Kim, Se Hyun) | - |
dc.contributor.author | Park, Chan Eon | - |
dc.date.accessioned | 2022-07-15T23:47:56Z | - |
dc.date.available | 2022-07-15T23:47:56Z | - |
dc.date.created | 2021-05-14 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.issn | 1463-9076 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157648 | - |
dc.description.abstract | Solution-processed organic field effect transistors (OFETs), which are amenable to facile large-area processing methods, have generated significant interest as key elements for use in all-organic electronic applications aimed at realizing low-cost, lightweight, and flexible devices. The low performance levels of n-type solution-processed bottom-contact OFETs unfortunately continue to pose a barrier to their commercialization. In this study, we introduced a combination of CVD-grown graphene source/drain (S/D) electrodes and fullerene (C-60) in a solution-processable n-type semiconductor toward the fabrication of n-type bottom-contact OFETs. The C-60 coating in the channel region was achieved by modifying the surface of the oxide gate dielectric layer with a phenyl group-terminated self-assembled monolayer (SAM). The graphene and phenyl group in the SAMs induced pi-pi interactions with C-60, which facilitated the formation of a C-60 coating. We also investigated the effects of thermal annealing on the reorganization properties and field-effect performances of the overlaying solution-processed C-60 semiconductors. We found that thermal annealing of the C-60 layer on the graphene surface improved the crystallinity of the face-centered cubic (fcc) phase structure, which improved the OFET performance and yielded mobilities of 0.055 cm(2) V-1 s(-1). This approach enables the realization of solution-processed C-60-based FETs using CVD-grown graphene S/D electrodes via inexpensive and solution-process techniques. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Solution-processed n-type fullerene field-effect transistors prepared using CVD-grown graphene electrodes: improving performance with thermal annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jang, Jaeyoung | - |
dc.identifier.doi | 10.1039/c4cp05787b | - |
dc.identifier.scopusid | 2-s2.0-84923362047 | - |
dc.identifier.wosid | 000351435300054 | - |
dc.identifier.bibliographicCitation | PHYSICAL CHEMISTRY CHEMICAL PHYSICS, v.17, no.9, pp.6635 - 6643 | - |
dc.relation.isPartOf | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.citation.title | PHYSICAL CHEMISTRY CHEMICAL PHYSICS | - |
dc.citation.volume | 17 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 6635 | - |
dc.citation.endPage | 6643 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Fullerenes | - |
dc.subject.keywordPlus | Graphite | - |
dc.subject.keywordPlus | Microscopy | - |
dc.subject.keywordPlus | Atomic Force | - |
dc.subject.keywordPlus | Temperature | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2015/CP/C4CP05787B | - |
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