Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient
DC Field | Value | Language |
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dc.contributor.author | Hong, Junghyup | - |
dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Song, Hyoseok | - |
dc.contributor.author | Kang, Chunho | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Jeon, Heeyoung | - |
dc.contributor.author | Park, Jingyu | - |
dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Kim, Honggi | - |
dc.date.accessioned | 2022-07-15T23:59:10Z | - |
dc.date.available | 2022-07-15T23:59:10Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157778 | - |
dc.description.abstract | As the device size is scaled down, the physical size limit is an issue that limits conventional chargebased memories. Thus, many academic studies have focused on investigating alternative non-volatile memories (NVMs). One NVM candidate is a resistive random access memory (RRAM), which has a simple structure and can be densified with a crossbar array structure. The resistive-switching characteristic of the Pt/annealed-TaO (x) /TiN structure was investigated in this research. Annealing at 300A degrees C in an oxygen ambient changed the phase of the TaO (x) layer from TaO2-y to Ta2O5-z . We investigated this change by using X-ray diffraction. The Ta2O5 thin layer, which was formed by annealing, produced a reliable conducting filament in the annealed-TaO (x) layer and improved the device characteristics. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.3938/jkps.66.721 | - |
dc.identifier.scopusid | 2-s2.0-84925357518 | - |
dc.identifier.wosid | 000351526000001 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.66, no.5, pp.721 - 725 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 66 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 721 | - |
dc.citation.endPage | 725 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001971280 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordAuthor | RRAM | - |
dc.subject.keywordAuthor | TaOx | - |
dc.subject.keywordAuthor | Annealing | - |
dc.identifier.url | https://link.springer.com/article/10.3938/jkps.66.721 | - |
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