Evaluation of optical properties of EUV resist underlayer
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Jung Sik | - |
dc.contributor.author | Hong, Seongchul | - |
dc.contributor.author | Lee, Jae Uk | - |
dc.contributor.author | Lee, Seung Min | - |
dc.contributor.author | Kim, Jung Hwan | - |
dc.contributor.author | Song, Hyun Min | - |
dc.contributor.author | Ahn, Jin ho | - |
dc.date.accessioned | 2022-07-16T00:12:48Z | - |
dc.date.available | 2022-07-16T00:12:48Z | - |
dc.date.created | 2021-05-11 | - |
dc.date.issued | 2015-03 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157835 | - |
dc.description.abstract | The resist underlayer (UL) has been shown to beneficially impact the exposure latitude in photolithography techniques. As a result, the development of the resist UL is in progress for extreme ultraviolet lithography (EUVL) as well. Since the aspect ratio of patterns increases as the feature size decreases, a high-performance EUV UL is expected to be in high demand. In this study, we evaluated the optical properties of the EUV UL by using the lithography simulation tool PROLITH X5 (KLA-Tencor). We quantified the imaging properties of a 14 nm half-pitch (HP) line and space (L/S) pattern by varying the refractive index, extinction coefficient and thickness of the UL under 0.5 numerical aperture (NA) conditions with a conventional binary intensity mask. These simulations reveal that the number of photons absorbed in the photoresist increases as the refractive index of the UL decreases; this results from the increase in reflectivity from the UL/photoresist interface. Therefore, the line critical dimension (CD) mean value decreases and stochastic imaging properties improve in the observation plane. As the refractive index of the UL is reduced, however, the light intensity in resist and the distribution of photons is distorted by the standing wave effect, resulting in roughness and non-uniformity in the pattern sidewall. Therefore, the refractive index of the UL should be similar to that of the photoresist in order to get the optimized performance. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPIE | - |
dc.title | Evaluation of optical properties of EUV resist underlayer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jin ho | - |
dc.identifier.doi | 10.1117/12.2085755 | - |
dc.identifier.scopusid | 2-s2.0-84931322730 | - |
dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.9422 | - |
dc.relation.isPartOf | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.volume | 9422 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Aspect ratio | - |
dc.subject.keywordPlus | Extreme ultraviolet lithography | - |
dc.subject.keywordPlus | Lithography | - |
dc.subject.keywordPlus | Photolithography | - |
dc.subject.keywordPlus | Photons | - |
dc.subject.keywordPlus | Photoresists | - |
dc.subject.keywordPlus | Refractive index | - |
dc.subject.keywordPlus | Stochastic models | - |
dc.subject.keywordPlus | Stochastic systems | - |
dc.subject.keywordPlus | Binary intensity masks | - |
dc.subject.keywordPlus | EUV | - |
dc.subject.keywordPlus | Extinction coefficients | - |
dc.subject.keywordPlus | Lithography Simulation | - |
dc.subject.keywordPlus | Optimized performance | - |
dc.subject.keywordPlus | Standing wave effects | - |
dc.subject.keywordPlus | Stochastic simulations | - |
dc.subject.keywordPlus | Underlayers | - |
dc.subject.keywordPlus | Optical properties | - |
dc.subject.keywordAuthor | EUV | - |
dc.subject.keywordAuthor | Lithography | - |
dc.subject.keywordAuthor | Optical property | - |
dc.subject.keywordAuthor | Photoresist | - |
dc.subject.keywordAuthor | Stochastic simulation | - |
dc.subject.keywordAuthor | Underlayer | - |
dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/9422/1/Evaluation-of-optical-properties-of-EUV-resist-underlayer/10.1117/12.2085755.short?SSO=1 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.