Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal organic chemical vapor deposition using a Ni(Pr-i-DAD)(2) precursor
DC Field | Value | Language |
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dc.contributor.author | Park, Jingyu | - |
dc.contributor.author | Jeon, Heeyoung | - |
dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Kang, Chunho | - |
dc.contributor.author | Yuh, Junhan | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-07-16T00:30:55Z | - |
dc.date.available | 2022-07-16T00:30:55Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-02 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/157955 | - |
dc.description.abstract | Ni films were deposited by metal organic chemical vapor deposition (MOCVD) using a novel Ni precursor, bis(1,4-di-isopropyl-1,3-diazabutadienyl)nickel [Ni(Pr-i-DAD)(2)], and NH3 gas. To optimize process conditions, the deposition temperature and reactant partial pressure were varied from 200 to 350 degrees C and from 0.2 to 0.99 Torr, respectively. Ni films deposited at 300 degrees C with a reactant pressure of 0.8 Torr exhibited excellent quality, and had a low carbon impurity concentration of around 4%. In addition, a sacrificial Ti capping layer was deposited by an in situ e-beam evaporator on top of the Ni films to enhance the thermal stability of the subsequently formed NiSi films. Both the Ti-capped and uncapped Ni films were annealed by a two-step method, with a first annealing conducted at 500 degrees C, followed by wet etching and then a second annealing carried out from 500 to 900 degrees C. The Ti capping layer did not affect the silicidation kinetic process, but by acting-as an oxygen scavenger, it did enhance the morphological stability of the NiSi films and thus improve their electrical properties. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal organic chemical vapor deposition using a Ni(Pr-i-DAD)(2) precursor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.7567/JJAP.54.025501 | - |
dc.identifier.scopusid | 2-s2.0-84923171856 | - |
dc.identifier.wosid | 000350091000018 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.2, pp.1 - 7 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 54 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NICKEL SILICIDE | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.54.025501 | - |
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