Electric-field-induced Shift in the Threshold Voltage in LaAlO3/SrTiO3 Heterostructuresopen access
- Authors
- Kim, Seong Keun; Kim, Shin-Ik; Lim, Hyungkwang; Jeong, Doo Seok; Kwon, Beomjin; Baek, Seung-Hyub; Kim, Jin-Sang
- Issue Date
- Jan-2015
- Publisher
- NATURE RESEARCH
- Citation
- SCIENTIFIC REPORTS, v.5, pp.1 - 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 5
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158044
- DOI
- 10.1038/srep08023
- ISSN
- 2045-2322
- Abstract
- The two-dimensional electron gas (2DEG) at the interface between insulating LaAlO3 and SrTiO3 is intriguing both as a fundamental science topic and for possible applications in electronics or sensors. For example, because the electrical conductance of the 2DEG at the LaAlO3/SrTiO(3)Z interface can be tuned by applying an electric field, new electronic devices utilizing the 2DEG at the LaAlO3/SrTiO3 interface could be possible. For the implementation of field-effect devices utilizing the 2DEG, determining the on/off switching voltage for the devices and ensuring their stability are essential. However, the factors influencing the threshold voltage have not been extensively investigated. Here, we report the voltage-induced shift of the threshold voltage of Pt/LaAlO3/SrTiO3 heterostructures. A large negative voltage induces an irreversible positive shift in the threshold voltage. In fact, after the application of such a large negative voltage, the original threshold voltage cannot be recovered even by application of a large positive electric field. This irreversibility is attributed to the generation of deep traps near the LaAlO3/SrTiO3 interface under the negative voltage. This finding could contribute to the implementation of nanoelectronic devices using the 2DEG at the LaAlO3/SrTiO3 interface.
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