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Improved light extraction efficiency and leakage characteristics in light-emitting diodes by nanorod arrays formed on hexagonal pits
- Issue Date
- Jan-2015
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Light-emitting diode; ZnO; Etch pit; Light extraction
- Citation
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.29, pp.380 - 385
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Volume
- 29
- Start Page
- 380
- End Page
- 385
- ISSN
- 1369-8001
- Abstract
- We report the enhancement of light extraction efficiency (LEE) and electrical performance in GaN-based green light-emitting diodes (LEDs) using ZnO nanorods formed on the etched surface of p-GaN. Green LEDs with hybrid ZnO nanorod structures grown on the hexagonally etched topmost layer of the LEDs, show an improvement in electroluminescence intensity that is 3.5 times higher than LEDs without any other surface treatments. The improvement in LEE in LEDs with nanohybrid structures was confirmed by finite-difference time-domain simulation analysis. Besides LEE enhancement, the surface etching effects on the reduction of leakage current of fabricated LEDs were also investigated.
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)