Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 cm(2)/Vs
DC Field | Value | Language |
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dc.contributor.author | Ok, Kyung-Chul | - |
dc.contributor.author | Jeong, Hyun-Jun | - |
dc.contributor.author | Kim, Hyun-Suk | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-16T00:56:50Z | - |
dc.date.available | 2022-07-16T00:56:50Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158117 | - |
dc.description.abstract | High-performance thin-film transistors (TFTs) based on ZnON channels were fabricated using a de reactive sputtering method. To improve the photoinduced bias stability, a postannealing process was carried out at a low ambient pressure (similar to 100 mTorr, air ambient) at 250 degrees C for various annealing times (1-5 h). The transfer characteristics of the postannealed ZnON TFTs exhibited an improved subthreshold swing ranging from 0.60 to 0.42 V/decade. Other transport properties remained similar including a high mobility (mu(sat)) of >50 cm(2)Ns, a threshold voltage (Vth) of 2.5 V, and an ON OFF drain current ratio of >10(8). In addition, photoinduced bias reliability under a gate bias stress (V-G = 20 V) was significantly improved from -10.88 V (1 h) to -2.28 V (5 h). These results can be explained by the enhancement of bonding properties between Zn metal and two different anions (O, N) as stable N Zn O states. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Highly Stable ZnON Thin-Film Transistors With High Field-Effect Mobility Exceeding 50 cm(2)/Vs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1109/LED.2014.2365614 | - |
dc.identifier.scopusid | 2-s2.0-84920134859 | - |
dc.identifier.wosid | 000347045200014 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.36, no.1, pp.38 - 40 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 36 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 38 | - |
dc.citation.endPage | 40 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | NITROGEN | - |
dc.subject.keywordAuthor | High mobility | - |
dc.subject.keywordAuthor | illumination | - |
dc.subject.keywordAuthor | reactive sputtering | - |
dc.subject.keywordAuthor | reliability | - |
dc.subject.keywordAuthor | transistors | - |
dc.subject.keywordAuthor | zinc oxynitride | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/6939617 | - |
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