Impact of tungsten contamination on the sensing margin of a CMOS image sensor cell
DC Field | Value | Language |
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dc.contributor.author | Song, Seung-Hyun | - |
dc.contributor.author | Kim, Il-Hwan | - |
dc.contributor.author | Lee, Gon-Sub | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T00:59:51Z | - |
dc.date.available | 2022-07-16T00:59:51Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2015-01 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158134 | - |
dc.description.abstract | We investigated the impact of tungsten contamination on minority-carrier recombination lifetime, the photodiode dark/photo current and sensitivity of a pinned photodiode, and the sensing margin of a CMOS image sensor (CIS) cell. After an intentional tungsten contamination and followed by driving at 800 degrees C for 30 min, tungsten contaminant were located from the surface to p- and n-type regions of a photodiode. The tungsten contamination degraded minority-carrier recombination life-time and the dark current and sensitivity of a pinned photodiode; i.e., there was a good correlation between the minority recombination lifetime and the sensitivity of a photodiode. As a result, tungsten contamination directly degraded the sensing margin of a CIS cell photodiode; i.e., it decreased with increasing tungsten contaminant concentration. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Impact of tungsten contamination on the sensing margin of a CMOS image sensor cell | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.7567/JJAP.54.016501 | - |
dc.identifier.scopusid | 2-s2.0-84920651448 | - |
dc.identifier.wosid | 000346957900033 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.1, pp.1 - 6 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 54 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | LEVEL TRANSIENT SPECTROSCOPY | - |
dc.subject.keywordPlus | SILICON-WAFERS | - |
dc.subject.keywordPlus | CURRENT IMPLANTERS | - |
dc.subject.keywordPlus | IRON IMPURITIES | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | TRAPS | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.54.016501 | - |
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