Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method
DC Field | Value | Language |
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dc.contributor.author | Nguyen, Manh-Cuong | - |
dc.contributor.author | Jeon, Yoon-Seok | - |
dc.contributor.author | Tong, Duc-Tai | - |
dc.contributor.author | You, Seung-Won | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.contributor.author | Kim, Bio | - |
dc.contributor.author | Ahn, Jae-Young | - |
dc.contributor.author | Hwang, Kihyun | - |
dc.contributor.author | Choi, Rino | - |
dc.date.accessioned | 2022-07-16T01:16:31Z | - |
dc.date.available | 2022-07-16T01:16:31Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158330 | - |
dc.description.abstract | The trap distribution of a polysilicon (poly-Si) channel in a metal-oxide-semiconductor field effect transistor (MOSFET) was extracted successfully using a variable amplitude charge pumping method (VACP) and an energy band bending model. Compared to single crystal Si channels, the poly-Si channels exhibited a high density of bulk channel traps due to the presence of grain boundaries. The densities of the trap states existing in the poly-silicon channel with various grain sizes and channel thicknesses were extracted and compared. The grain size of poly-Si was found to have a stronger impact on the trap distribution than the channel thickness. After hot carrier stress, the trap density in the poly-silicon channel increases and the generated traps are located both at mid gap energy level and near the conduction band energy level. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Analysis of trap distribution in polysilicon channel transistors using the variable amplitude charge pumping method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1016/j.sse.2014.11.015 | - |
dc.identifier.scopusid | 2-s2.0-84918587161 | - |
dc.identifier.wosid | 000349426900015 | - |
dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.104, pp.86 - 89 | - |
dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
dc.citation.title | SOLID-STATE ELECTRONICS | - |
dc.citation.volume | 104 | - |
dc.citation.startPage | 86 | - |
dc.citation.endPage | 89 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Electric breakdown | - |
dc.subject.keywordPlus | Electron beam lithography | - |
dc.subject.keywordPlus | Grain boundaries | - |
dc.subject.keywordAuthor | Channel trap density | - |
dc.subject.keywordAuthor | Charge pumping | - |
dc.subject.keywordAuthor | Grain size effect | - |
dc.subject.keywordAuthor | Hot carrier injection | - |
dc.subject.keywordAuthor | Polysilicon | - |
dc.subject.keywordAuthor | Trap distribution | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0038110114002834?via%3Dihub | - |
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