Characterization of microcrystalline silicon thin film solar cells prepared by high working pressure plasma-enhanced chemical vapor deposition
DC Field | Value | Language |
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dc.contributor.author | Lee, Sung-Do | - |
dc.contributor.author | Lee, Young-Joo | - |
dc.contributor.author | Nam, Kee-Seok | - |
dc.contributor.author | Jeong, Yongsoo | - |
dc.contributor.author | Kim, Dong-Ho | - |
dc.contributor.author | Kim, Chang-Su | - |
dc.contributor.author | Park, Sung-Gyu | - |
dc.contributor.author | Kwon, Se-Hun | - |
dc.contributor.author | Kwon, Jung-Dae | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-16T01:37:00Z | - |
dc.date.available | 2022-07-16T01:37:00Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-12 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158475 | - |
dc.description.abstract | Using the high working pressure plasma-enhanced chemical vapor deposition (HWP-PECVD) technique, the hydrogenated microcrystalline silicon (mu c-Si:H) films for photovoltaic layers of thin film solar cells was investigated. The mu c-Si:H films were deposited on surface textured fluorine-doped tin oxide (FTO) glass substrates at 100 Torr in a 100 MHz very high frequency (VHF) plasma of gas mixtures containing He, H-2, and SiH4. It was found that an optimum ratio of the H-2/SiH4 flow-rate existed for growing a homogenous microcrystalline through the whole film without amorphous incubation layer. When an intrinsic mu c-Si:H thin film was deposited at n-i-p single junction solar cell, the cell performances were dependent on with or without an amorphous incubation layer. With an amorphous incubation layer, the open circuit voltage (V (oc) ) of cell was 0.8 V, which was typical cell property of hydrogenated amorphous silicon (a-Si:H). On the other hand, at the optimum ratio of the H-2/SiH4 flow-rate, mu c-Si:H single cell responding an infrared light showed the V (oc) of 0.4 V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.title | Characterization of microcrystalline silicon thin film solar cells prepared by high working pressure plasma-enhanced chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1007/s10832-014-9929-x | - |
dc.identifier.scopusid | 2-s2.0-84916602541 | - |
dc.identifier.wosid | 000346172200003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTROCERAMICS, v.33, no.3-4, pp.149 - 154 | - |
dc.relation.isPartOf | JOURNAL OF ELECTROCERAMICS | - |
dc.citation.title | JOURNAL OF ELECTROCERAMICS | - |
dc.citation.volume | 33 | - |
dc.citation.number | 3-4 | - |
dc.citation.startPage | 149 | - |
dc.citation.endPage | 154 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | HIGH-RATES | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | EVOLUTION | - |
dc.subject.keywordAuthor | Silicon | - |
dc.subject.keywordAuthor | Microcrystalline | - |
dc.subject.keywordAuthor | High working pressure | - |
dc.subject.keywordAuthor | Chemical vapor deposition | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s10832-014-9929-x | - |
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