Anode dependence of set voltage in resistive switching of metal/HfO2/metal resistors

Abstract

The anode dependence of set voltage in resistive switching behaviors of metal/HfO2/metal resistors is investigated by applying positive and negative voltage polarity, and by changing the location of the electrodes made of various metals including Al, Pt, Mo, and Ru. When the same anode is applied to resistors whatever cathodes are, their set voltages in high resistance state are very similar. The strong anode dependence on set voltage is related to the potential near the anode domain owing to the partial rupture of the conducting filament. This rupture of filaments makes the thick insulator film thinner with a small potential barrier.