Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Atomic variations in digital alloy InGaP/InGaAIP multiple quantum wells due to thermal treatment
- Authors
- Shin, Jae Won; Jeong, Hu Young; Yoo, Seung Jo; Lee, Seok-Hoon; Han, Jun Hee; Lee, Jeong Yong; Ahn, Jun Sung; Park, Chang Young; Park, Kwang Wook; Lee, Yong-Tak; Kim, Jin-Gyu; Kim, Tae Whan
- Issue Date
- Nov-2014
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.11, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 53
- Number
- 11
- Start Page
- 1
- End Page
- 5
- ISSN
- 0021-4922
- Abstract
- High-resolution transmission electron microscopy (HRTEM) images showed that the lattice distortion of as-grown InGaP/InGaAIP multiple quantum wells (MQWs) appeared to be due to the small thickness of the alloyed layers, and that their distortion was relaxed owing to the high atomic mobility. High-angle annular dark-field scanning transmission electron microscopy images demonstrated that the chemical intermixing of Ga and Al atoms between the InAlP and InGaP alloy layers due to thermal annealing relaxed the stress of the InGaAIP layer. The atomic arrangements of the as-grown and annealed MQWs are described on the basis of the experimental results.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.