Formamide Mediated, Air-Brush Printable, Indium-Free Soluble Zn-Sn-O Semiconductors for Thin-Film Transistor Applications
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong Jip | - |
dc.contributor.author | Jeon, Hye-Ji | - |
dc.contributor.author | Oh, Sang-Jin | - |
dc.contributor.author | Lee, Sun Sook | - |
dc.contributor.author | Choi, Youngmin | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Jeong, Sunho | - |
dc.date.accessioned | 2022-07-16T02:14:40Z | - |
dc.date.available | 2022-07-16T02:14:40Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158757 | - |
dc.description.abstract | In this study, for high-performance indium-free metal oxide channel layer, we synthesize Zn-Sn-O (ZTO) precursor solutions in which formamide is incorporated as an additive for catalyzing the subsequent sol gel reactions and the evolution of chemical structure. It is revealed that the formamide plays a critical chemical role in evolving a chemical structure with more oxygen-deficient oxide lattice and with less hydroxide, allowing for high field-effect mobility over 7 cm(2)/V. s. Furthermore, it is for the first time demonstrated that electrically active metal-oxide films can be patterned, using an air-brush printing technique, by directly depositing formamide-mediated ZTO-precursor solutions in patterned geometries. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Formamide Mediated, Air-Brush Printable, Indium-Free Soluble Zn-Sn-O Semiconductors for Thin-Film Transistor Applications | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1021/am505457t | - |
dc.identifier.scopusid | 2-s2.0-84910153554 | - |
dc.identifier.wosid | 000344978200009 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.6, no.21, pp.18429 - 18434 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 6 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 18429 | - |
dc.citation.endPage | 18434 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | LOW-TEMPERATURE FABRICATION | - |
dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTOR | - |
dc.subject.keywordPlus | SOL-GEL | - |
dc.subject.keywordPlus | STABILITY | - |
dc.subject.keywordAuthor | formamide | - |
dc.subject.keywordAuthor | - | |
dc.subject.keywordAuthor | indium free | - |
dc.subject.keywordAuthor | zinc tin oxide | - |
dc.subject.keywordAuthor | semiconductor | - |
dc.subject.keywordAuthor | transistor | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/am505457t | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.