Reduction in the Interfacial Trap Density of Al2O3/GaAs Gate Stack by Adopting High Pressure Oxidation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, Hajin | - |
dc.contributor.author | Kim, Seongkyung | - |
dc.contributor.author | Kim, Joon Rae | - |
dc.contributor.author | Suh, Sungin | - |
dc.contributor.author | Song, Ji Hun | - |
dc.contributor.author | Lee, Nae-In | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.contributor.author | Lee, Nae-In | - |
dc.date.accessioned | 2022-07-16T02:31:23Z | - |
dc.date.available | 2022-07-16T02:31:23Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 2162-8769 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158867 | - |
dc.description.abstract | The high interfacial trap density in GaAsMOScapacitors is one of the critical issues for realizing highmobility field-effect transistors. This paper proposes a new approach involving the high pressure thermal oxidation (HPO) of GaAs and subsequent HF etching prior to the deposition of an Al2O3 dielectric film. The HPO-treated MOS capacitors exhibited better electrical properties, such as reduced hysteresis and frequency dispersion compared to those of the control capacitors. These improvements were attributed to their reduced interfacial trap density. The relevant rationale is discussed based on the suppression of the Ga2O3 layer between the Al2O3 dielectric and GaAs semiconductor, which resulted from the As excess and Ga deficient surface modification via HPO and subsequent HF etching. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Reduction in the Interfacial Trap Density of Al2O3/GaAs Gate Stack by Adopting High Pressure Oxidation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1149/2.0101412jss | - |
dc.identifier.scopusid | 2-s2.0-84923582717 | - |
dc.identifier.wosid | 000342777200011 | - |
dc.identifier.bibliographicCitation | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.3, no.12, pp.232 - 235 | - |
dc.relation.isPartOf | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.title | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 3 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | 232 | - |
dc.citation.endPage | 235 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RAY-PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | GAAS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | HYDROGEN | - |
dc.subject.keywordPlus | SURFACES | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.