Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyo Jin | - |
dc.contributor.author | Je, So Yeon | - |
dc.contributor.author | Won, Ju Yeon | - |
dc.contributor.author | Baek, Jong Han | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2022-07-16T02:31:37Z | - |
dc.date.available | 2022-07-16T02:31:37Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 1862-6254 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158869 | - |
dc.description.abstract | The effects of antimony (Sb) doping on solution-processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb-doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high I-ON/OFF ratio of 4.6 cm(2)/V s, 0.29 V/decade, 1.9 V, and 3 x 10(7), respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InOx TFTs. This improvement was attributed to the reduction of oxygen-related defects and/or the existence of the lone-pair s-electron of Sb3+ in amorphous InSbO films. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1002/pssr.201409402 | - |
dc.identifier.scopusid | 2-s2.0-84910628251 | - |
dc.identifier.wosid | 000345274300007 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.8, pp.924 - 927 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.citation.title | PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | - |
dc.citation.volume | 8 | - |
dc.citation.startPage | 924 | - |
dc.citation.endPage | 927 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | Semiconducting indium | - |
dc.subject.keywordPlus | Semiconductor doping | - |
dc.subject.keywordPlus | Temperature | - |
dc.subject.keywordPlus | Thin film circuits | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Threshold voltage | - |
dc.subject.keywordAuthor | Antimony doping | - |
dc.subject.keywordAuthor | Indium oxide semiconductors | - |
dc.subject.keywordAuthor | Lone-pair s-electron | - |
dc.subject.keywordAuthor | Photobias stability | - |
dc.subject.keywordAuthor | Thin film transistors | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/pssr.201409402 | - |
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