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Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors

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dc.contributor.authorKim, Hyo Jin-
dc.contributor.authorJe, So Yeon-
dc.contributor.authorWon, Ju Yeon-
dc.contributor.authorBaek, Jong Han-
dc.contributor.authorJeong, Jae Kyeong-
dc.date.accessioned2022-07-16T02:31:37Z-
dc.date.available2022-07-16T02:31:37Z-
dc.date.created2021-05-13-
dc.date.issued2014-10-
dc.identifier.issn1862-6254-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/158869-
dc.description.abstractThe effects of antimony (Sb) doping on solution-processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb-doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high I-ON/OFF ratio of 4.6 cm(2)/V s, 0.29 V/decade, 1.9 V, and 3 x 10(7), respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InOx TFTs. This improvement was attributed to the reduction of oxygen-related defects and/or the existence of the lone-pair s-electron of Sb3+ in amorphous InSbO films.-
dc.language영어-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.titleEffect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors-
dc.typeArticle-
dc.contributor.affiliatedAuthorJeong, Jae Kyeong-
dc.identifier.doi10.1002/pssr.201409402-
dc.identifier.scopusid2-s2.0-84910628251-
dc.identifier.wosid000345274300007-
dc.identifier.bibliographicCitationPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.8, pp.924 - 927-
dc.relation.isPartOfPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS-
dc.citation.titlePHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS-
dc.citation.volume8-
dc.citation.startPage924-
dc.citation.endPage927-
dc.type.rimsART-
dc.type.docType정기학술지(Article(Perspective Article포함))-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusSemiconducting indium-
dc.subject.keywordPlusSemiconductor doping-
dc.subject.keywordPlusTemperature-
dc.subject.keywordPlusThin film circuits-
dc.subject.keywordPlusThin films-
dc.subject.keywordPlusThreshold voltage-
dc.subject.keywordAuthorAntimony doping-
dc.subject.keywordAuthorIndium oxide semiconductors-
dc.subject.keywordAuthorLone-pair s-electron-
dc.subject.keywordAuthorPhotobias stability-
dc.subject.keywordAuthorThin film transistors-
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/10.1002/pssr.201409402-
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