High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer
DC Field | Value | Language |
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dc.contributor.author | Lee, Hyoung-Rae | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T02:43:28Z | - |
dc.date.available | 2022-07-16T02:43:28Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-10 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159001 | - |
dc.description.abstract | We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V (th) ) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO (X) distributed on the a-IGZO surface reduced the adsorption and the desorption of H2O and O-2. This process is applicable to the TFT manufacturing process with a variable sputtering target. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.3938/jkps.65.1174 | - |
dc.identifier.scopusid | 2-s2.0-84910002299 | - |
dc.identifier.wosid | 000344333300037 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.65, no.7, pp.1174 - 1178 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 65 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 1174 | - |
dc.citation.endPage | 1178 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001921348 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | IGZO TFT | - |
dc.subject.keywordAuthor | Stability | - |
dc.subject.keywordAuthor | NBIS | - |
dc.subject.keywordAuthor | Si doped | - |
dc.identifier.url | https://link.springer.com/article/10.3938%2Fjkps.65.1174 | - |
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