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Stochastic Model for SPICE simulation about Resistance Distribution of Magnetic Tunnel Junction
- Issue Date
- Sep-2014
- Publisher
- The Japan society of applied physics
- Citation
- Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials, pp.86 - 87
- Indexed
- OTHER
- Journal Title
- Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials
- Start Page
- 86
- End Page
- 87
- Abstract
- A non-uniform resistance distribution for magnetic tunnel junction (MTJ) causes serious problem to realize for commercial Gbit STT-MRAM. The resistance of MTJ is varied by a combination of various causes referred to as a stochastic behavior. In this paper, we investigated a stochastic behavior model for MTJ resistance from measured real data. The proposed model can be possible to analyze an exact resistance behavior of MTJ at any parameter variation. It can be very useful for circuit design and simulation purposes.
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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Related Researcher
- Song, Yun Heub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)