Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors
DC Field | Value | Language |
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dc.contributor.author | Son, Byeong-Geun | - |
dc.contributor.author | Je, So Yeon | - |
dc.contributor.author | Kim, Hyo Jin | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2022-07-16T02:59:31Z | - |
dc.date.available | 2022-07-16T02:59:31Z | - |
dc.date.created | 2021-05-13 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.issn | 2046-2069 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159102 | - |
dc.description.abstract | Indium zinc oxide (IZO) thin film transistors (TFTs) with poly(4-vinylphenol-co-methylmethacrylate) (PVP-co- PMMA) gate insulators were fabricated at a low temperature (250 degrees C). The bottom gate IZO TFTs with a PVP-co-PMMA gate electric film exhibited inferior device performance to the top gate IZO TFTs, which was attributed to sputtering damage of the underlying polymer gate dielectric film during IZO channel formation. The charge carrier transport and interface properties of the IZO TFTs could be further improved by introducing a ZrO2 precursor to the polymer gate insulator. The ZrO2 molecules were well dispersed in the polymer film. The resulting hybrid dielectric film showed a higher capacitance and a smoother morphology than the PVP-co-PMMA dielectric film. The hybrid dielectric-gated IZO TFT had a high mobility of 28.4 cm(2) V-1 s(-1), low subthreshold gate swing of 0.70 V per decade, and a high I-on/off ratio of 4.0 x 10(7). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Modification of a polymer gate insulator by zirconium oxide doping for low temperature, high performance indium zinc oxide transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
dc.identifier.doi | 10.1039/C4RA08548E | - |
dc.identifier.scopusid | 2-s2.0-84907833586 | - |
dc.identifier.wosid | 000342761600015 | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.4, no.86, pp.45742 - 45748 | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 4 | - |
dc.citation.number | 86 | - |
dc.citation.startPage | 45742 | - |
dc.citation.endPage | 45748 | - |
dc.type.rims | ART | - |
dc.type.docType | 정기학술지(Article(Perspective Article포함)) | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | Indium zinc oxides | - |
dc.subject.keywordPlus | Low temperatures | - |
dc.subject.keywordPlus | Polymer gate insulator | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2014/RA/C4RA08548E | - |
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