Effect of Au interlayer thickness on the structural, electrical, and optical properties of GZO/Au/GZO multilayers
- Authors
- Yang, Heewang; Shin, Seokyoon; Park, Joohyun; Ham, Giyul; Oh, Juhong; Jeon, Hyeongtag
- Issue Date
- Sep-2014
- Publisher
- ELSEVIER
- Keywords
- TCO; Ga doped ZnO; Au; Multilayer; Thickness
- Citation
- CURRENT APPLIED PHYSICS, v.14, no.9, pp.1331 - 1334
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 14
- Number
- 9
- Start Page
- 1331
- End Page
- 1334
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159213
- DOI
- 10.1016/j.cap.2014.07.008
- ISSN
- 1567-1739
- Abstract
- We report on the structural, electrical, and optical properties of Ga-doped ZnO/Au/Ga-doped ZnO (GZO/Au/GZO) multilayers as a function of Au interlayer thickness. Aggregated Au islands formed a continuous film as the thickness of the Au interlayer increased from 3 to 12 nm. Consequently, the sheet resistance, resistivity, and optical transmittance decreased with increasing Au interlayer thickness compared to a GZO single layer. However, a relatively high peak transmittance and a high figure of merit were obtained for an Au interlayer thickness of 9 nm. These results showed that the characteristics of GZO/Au/GZO multilayers could be improved by inserting an Au interlayer of optimized thickness. In addition, it indicated that the GZO/Au/GZO multilayer is the most promising candidates for indium free transparent conducting oxides (TCOs).
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