Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Jeon, Heeyoung | - |
dc.contributor.author | Kang, Chunho | - |
dc.contributor.author | Song, Hyoseok | - |
dc.contributor.author | Park, Jingyu | - |
dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Seo, Hyungtak | - |
dc.contributor.author | Leskela, Markku | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-07-16T03:10:08Z | - |
dc.date.available | 2022-07-16T03:10:08Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-09 | - |
dc.identifier.issn | 1862-6300 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159226 | - |
dc.description.abstract | We investigated the characteristics of silicon nitride (SiNx) thin films deposited by remote plasma atomic layer deposition (RPALD) using trisilyamine (TSA) and ammonia (NH3) plasma at low temperatures. Although the process window of SiNx thin films is 150-350 degrees C, considering the refractive index (RI), SiNx thin films deposited at 250-350 degrees C were focused on for analyses. All of the SiNx films were nearly stoichiometric, regardless of the deposition temperature. As the deposition temperature increased, the RI increased, while the hydrogen content decreased. The defect density also changed at higher deposition temperatures; as the deposition temperature increased, all of the trap densities increased because of the low-hydrogen content in the SiNx thin films. The characteristics of the SiNx thin film deposited by RPALD could be controlled to adjust the defect density for charge trap flash memory applications by changing the deposition temperature. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1002/pssa.201431162 | - |
dc.identifier.scopusid | 2-s2.0-85027929933 | - |
dc.identifier.wosid | 000341988400035 | - |
dc.identifier.bibliographicCitation | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.211, no.9, pp.2166 - 2171 | - |
dc.relation.isPartOf | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.title | PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | - |
dc.citation.volume | 211 | - |
dc.citation.number | 9 | - |
dc.citation.startPage | 2166 | - |
dc.citation.endPage | 2171 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | CHEMICAL-VAPOR-DEPOSITION | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | defect | - |
dc.subject.keywordAuthor | H content | - |
dc.subject.keywordAuthor | remote plasma atomic layer deposition | - |
dc.subject.keywordAuthor | silicon nitride thin film | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/pssa.201431162 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.