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Analytical Model of SSD Parallelism

Authors
Yoo, JinsooWon, YoujipKang, SooyongChoi, JongmooYoon, SungrohCha, Jaehyuk
Issue Date
Aug-2014
Publisher
IEEE
Keywords
Flash; Modeling; Parallelism; Simulation; SSD
Citation
SIMULTECH - International Conference on Simulation and Modeling Methodologies, Technologies and Applications, pp.551 - 559
Indexed
SCOPUS
Journal Title
SIMULTECH - International Conference on Simulation and Modeling Methodologies, Technologies and Applications
Start Page
551
End Page
559
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159304
DOI
10.5220/0005011605510559
Abstract
SSDs support various IO parallel mechanisms such as channel parallelism, way parallelism, and plane parallelism to increase IO performance. To measure an SSD's performance in a simulation environment, the simulator has to support the parallel IO operations of an SSD by modeling its internal IO behaviors. In this paper, we developed an analytical model to calculate the IO latency of multi-channel and multi-way architected SSDs. In formulating the IO latency model, we categorized SSDs' IO types into two operations: single page read/write operations and multiple page read/write operations. With the IO latency model, we can calculate the IO performance of a real SSD, Intel X25-M, with a 3.8% offset.
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서울 공과대학 > 서울 컴퓨터소프트웨어학부 > 1. Journal Articles

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