Enhancement of memory margins for stable organic bistable devices based on graphene-oxide layers due to embedded CuInS2 quantum dots
- Authors
- Yun, Dong Yeol; Park, Hun Min; Kim, Sung Woo; Kim, Sang Wook; Kim, Tae Whan
- Issue Date
- Aug-2014
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- CARBON, v.75, pp.244 - 248
- Indexed
- SCIE
SCOPUS
- Journal Title
- CARBON
- Volume
- 75
- Start Page
- 244
- End Page
- 248
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159380
- DOI
- 10.1016/j.carbon.2014.03.059
- ISSN
- 0008-6223
- Abstract
- Current-voltage (I-V) curves for Al/CuInS2 (CIS) quantum dots (QDs) embedded in graphene-oxide layer/indium-tin-oxide devices at 300 K showed a current bistability with a maximum high conductivity (ON)/low conductivity (OFF) ratio of 1 x 10(4), which was 100 times larger than the ON/OFF ratio of the device without CIS QDs. I-V curves and write-read-erase-read voltage cycles demonstrated the rewritable nonvolatile memory properties of the organic bistable devices (OBDs) with ON and OFF current states at the same voltage. The retention time was above 1 x 10(5) s, indicative of the memory stability of the OBDs. I-V curve at lower voltages up to 0.05 V was attributed to the thermionic emission mechanism, and the curve in the applied voltage range from 0.06 to 0.17 V was related to an ohmic mechanism. The I-V characteristics in the applied voltage above 0.18 V dominantly followed the space-charge-limited-current behaviors.
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