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Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Oh, Dohyun | - |
| dc.contributor.author | Yun, Dong Yeol | - |
| dc.contributor.author | Cho, Woon-Jo | - |
| dc.contributor.author | Kim, Tae Whan | - |
| dc.date.accessioned | 2022-07-16T03:41:52Z | - |
| dc.date.available | 2022-07-16T03:41:52Z | - |
| dc.date.issued | 2014-08 | - |
| dc.identifier.issn | 0021-4922 | - |
| dc.identifier.issn | 1347-4065 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159424 | - |
| dc.description.abstract | Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visibje region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were-enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of. the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | IOP Publishing Ltd | - |
| dc.title | Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.7567/JJAP.53.086502 | - |
| dc.identifier.scopusid | 2-s2.0-84905971476 | - |
| dc.identifier.wosid | 000341479100025 | - |
| dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.53, no.8, pp 1 - 3 | - |
| dc.citation.title | Japanese Journal of Applied Physics | - |
| dc.citation.volume | 53 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 3 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
| dc.subject.keywordPlus | TRANSPARENT | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.subject.keywordPlus | DIODE | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.53.086502 | - |
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