Enhancement of the electrical characteristics of thin-film transistors with indium-zinc-tin oxide/Ag/indium-zinc-tin oxide multilayer electrodes
- Authors
- Oh, Dohyun; Yun, Dong Yeol; Cho, Woon-Jo; Kim, Tae Whan
- Issue Date
- Aug-2014
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.8, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 53
- Number
- 8
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159424
- DOI
- 10.7567/JJAP.53.086502
- ISSN
- 0021-4922
- Abstract
- Transparent indium-zinc-tin oxide (IZTO)-based thin-film transistors (TFTs) with IZTO/Ag/IZTO multilayer electrodes were fabricated on glass substrates using a tilted dual-target radio-frequency magnetron sputtering system. The IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes exhibited a high optical transmittance in a visibje region. The threshold voltage, the mobility, and the on/off-current ratio of the TFTs with IZTO/Ag/IZTO multilayer electrodes were-enhanced in comparison with those of the TFTs with ITO electrodes. The source/drain contact resistance of. the IZTO TFTs with IZTO/Ag/IZTO multilayer electrodes was smaller than that of the IZTO TFTs with ITO electrodes, resulting in enhancement of their electrical characteristics.
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