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Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Hyeon-A | - |
| dc.contributor.author | Kim, Jeong Oh | - |
| dc.contributor.author | Hur, Jae Seok | - |
| dc.contributor.author | Son, Kyoung-Seok | - |
| dc.contributor.author | Lim, Jun Hyung | - |
| dc.contributor.author | Cho, Johann | - |
| dc.contributor.author | Jeong, Jae Kyeong | - |
| dc.date.accessioned | 2021-08-02T12:51:55Z | - |
| dc.date.available | 2021-08-02T12:51:55Z | - |
| dc.date.created | 2021-05-12 | - |
| dc.date.issued | 2018-11 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15957 | - |
| dc.description.abstract | The effects of chamber pressure (P-C) on the structural and chemical properties of an indium gallium tin oxide (IGTO) channel layer were examined. Smoother and denser IGTO films were obtained with decreasing P-C, which were explained based on the enhanced kinetic energy of sputtered particles due to fewer collisions with the plasma atmosphere. The resulting IGTO thin-film transistor exhibited a high mobility of 35.0 cm(2)/Vs, subthreshold gate swing of 0.17 V/decade, threshold voltage (V-TH) of -0.45 V, and I-ON/OFF ratio >10(8), even at a low annealing temperature of 150 degrees C. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Achieving High Mobility in IGTO Thin-Film Transistors at a Low Temperature via Film Densification | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Jeong, Jae Kyeong | - |
| dc.identifier.doi | 10.1109/TED.2018.2868697 | - |
| dc.identifier.scopusid | 2-s2.0-85053606878 | - |
| dc.identifier.wosid | 000448030000017 | - |
| dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.11, pp.4854 - 4860 | - |
| dc.relation.isPartOf | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.title | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
| dc.citation.volume | 65 | - |
| dc.citation.number | 11 | - |
| dc.citation.startPage | 4854 | - |
| dc.citation.endPage | 4860 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | HIGH-PERFORMANCE | - |
| dc.subject.keywordPlus | OXIDE | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.subject.keywordPlus | IMPROVEMENT | - |
| dc.subject.keywordPlus | PRESSURE | - |
| dc.subject.keywordAuthor | Densification | - |
| dc.subject.keywordAuthor | indium gallium tin oxide (IGTO) | - |
| dc.subject.keywordAuthor | low temperature | - |
| dc.subject.keywordAuthor | mobility | - |
| dc.subject.keywordAuthor | sputtering | - |
| dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/8467548 | - |
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)