Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd](n)-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer
DC Field | Value | Language |
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dc.contributor.author | Chae, Kyo-Suk | - |
dc.contributor.author | Shim, Tae-Hun | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-07-16T04:04:54Z | - |
dc.date.available | 2022-07-16T04:04:54Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-07 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159624 | - |
dc.description.abstract | We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J(ex)) of a [Co/Pd](n)-synthetic-anti-ferro-magnetic layer fabricated with Co2Fe6B2/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J(ex) peaked at a certain Ru spacer-thickness: specifically, a J(ex) of 0.78 erg/cm(2) at 0.6 nm, satisfying the J(ex) criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J(ex) rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J(ex) criteria. However, the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co2Fe6B2 free layer/MgO tunneling barrier/Co2Fe6B2 pinned layer, although Co2Fe6B2/MgO based p-MTJ spin-valves ex-situ annealed at 275 degrees C achieved a TMR of similar to 70% at a RA of similar to 20 Omega mu m(2). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd](n)-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1063/1.4887352 | - |
dc.identifier.scopusid | 2-s2.0-84904683055 | - |
dc.identifier.wosid | 000340710500040 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.116, no.3, pp.1 - 5 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 116 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MAGNETORESISTANCE | - |
dc.subject.keywordPlus | Carbon dioxide | - |
dc.subject.keywordPlus | Electrodes | - |
dc.subject.keywordPlus | Magnesia | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4887352 | - |
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