Parabolic behavior of solution processed ZnSnO device performances depending on Zn/Sn ratios
DC Field | Value | Language |
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dc.contributor.author | Jeon, Hye-Ji | - |
dc.contributor.author | Chung, Kwun-Bum | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-16T04:32:17Z | - |
dc.date.available | 2022-07-16T04:32:17Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-06 | - |
dc.identifier.issn | 1385-3449 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/159852 | - |
dc.description.abstract | Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process, prepared by dissolving 0.2 M of zinc acetate dihydrate and tin chloride dihydrate in 20 mL of 2-methoxyethanol. All ZTO thin films showed amorphous phases and no impurities (no carbon and chlorine content) even at process temperature of 350 A degrees C. As the Sn ratio in ZTO films increased, the values of saturated mobility (u(sat)) and subthreshold gate swing (SS) exhibited a parabolic behavior in ZTO TFTs, depicting that the mu(sat) and SS values were a maximum (3.4 cm(2)/V.s) and minimum (0.38 V/decade) at Zn/Sn = 1 ratio. Interestingly, the x-ray absorption and X-ray photoemission spectroscopy revealed the origin of parabolic behavior, indicating not only to improve a charge transport in conduction bands but also to increase the Sn4+/Sn2+ ratio at the peak values (Sn/(Zn + Sn) = 1). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.title | Parabolic behavior of solution processed ZnSnO device performances depending on Zn/Sn ratios | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1007/s10832-014-9902-8 | - |
dc.identifier.scopusid | 2-s2.0-84905262740 | - |
dc.identifier.wosid | 000339721900009 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTROCERAMICS, v.32, no.4, pp.319 - 323 | - |
dc.relation.isPartOf | JOURNAL OF ELECTROCERAMICS | - |
dc.citation.title | JOURNAL OF ELECTROCERAMICS | - |
dc.citation.volume | 32 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 319 | - |
dc.citation.endPage | 323 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | Solution process | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s10832-014-9902-8 | - |
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