Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Hye-ji | - |
dc.contributor.author | Lee, Seul-Gi | - |
dc.contributor.author | Kim, H. | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-16T04:55:44Z | - |
dc.date.available | 2022-07-16T04:55:44Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014-05 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160059 | - |
dc.description.abstract | Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to similar to 100 times greater than that of undoped ZnO. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.title | Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1016/j.apsusc.2014.02.080 | - |
dc.identifier.scopusid | 2-s2.0-84897912805 | - |
dc.identifier.wosid | 000335095600053 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.301, pp.358 - 362 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 301 | - |
dc.citation.startPage | 358 | - |
dc.citation.endPage | 362 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | ZINC ACETATE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | Chemical vapor deposition | - |
dc.subject.keywordAuthor | Oxide semiconductor | - |
dc.subject.keywordAuthor | Thin film transistor | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0169433214003845?via%3Dihub | - |
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