Effect of metal electrode on characteristics of gamma-irradiated silicon carbide detector

Abstract

Silicon carbide (SiC) is a highly promising semiconductor neutron-detector material for harsh environments such as nuclear reactor cores and spent-fuel storage pools. In the present study, three 4H-SiC p-i-n diode detectors were fabricated as variations of those metal-electrode structures. The I-V characteristics and alpha-particle responses of the detectors were measured before and after gamma-ray exposure. The detector with a Ti/Au electrode showed the lowest change of leakage current after irradiation; none of the detectors showed any change in the charge-collection efficiency when a sufficient electric field was applied after gamma irradiation of up to 8.1 MGy.