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Temperature-Dependent Hall and Field-Effect Mobility in Strongly Coupled All-Inorganic Nanocrystal Arrays
- Issue Date
- Feb-2014
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Hall effect; InAs nanocrystals; inorganic ligands; charge transport; doping electron mobility; carrier trapping
- Citation
- NANO LETTERS, v.14, no.2, pp.653 - 662
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANO LETTERS
- Volume
- 14
- Number
- 2
- Start Page
- 653
- End Page
- 662
- ISSN
- 1530-6984
- Abstract
- We report on the temperature-dependent Hall effect characteristics of nanocrystal (NC) arrays prepared from colloidal InAs NCs capped with metal chalcogenide complex (MCC) ligands (In2Se42- and Cu7S4-). Our study demonstrates that Hall effect measurements are a powerful way of exploring the fundamental properties of NC solids. We found that solution-cast 5.3 nm InAs NC films capped with copper sulfide MCC ligands exhibited high Hall mobility values over 16 cm(2)/(V s). We also showed that the nature of MCC ligands can control doping in NC solids. The comparative study of the temperature-dependent Hall and field-effect mobility values provides valuable insights concerning the charge transport mechanism and points to the transition from a weak to a strong coupling regime in all-inorganic InAs NC solids.
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Related Researcher
- Jang, Jae young
- COLLEGE OF ENGINEERING (DEPARTMENT OF ENERGY ENGINEERING)