Enhancement of the power efficiency for p-i-n OLEDs containing organic p-type HAT-CN and n-type LCV materials
- Authors
- Lee, Kwang Seop; Lim, Iseul; Han, Sung Hwan; Kim, Tae Whan
- Issue Date
- Feb-2014
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- Organic n-type materials; Low operating voltage; High power efficiency
- Citation
- ORGANIC ELECTRONICS, v.15, no.2, pp.343 - 347
- Indexed
- SCIE
SCOPUS
- Journal Title
- ORGANIC ELECTRONICS
- Volume
- 15
- Number
- 2
- Start Page
- 343
- End Page
- 347
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160727
- DOI
- 10.1016/j.orgel.2013.11.023
- ISSN
- 1566-1199
- Abstract
- The p-i-n organic light-emitting devices (OLEDs) with a low turn-on voltage and a high power efficiency were fabricated by organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) layer and organic n-type 4,4',4 ''-methylidynetris (N,N-dimethy-laniline) (LCV) materials. The lowest operating voltage of the electron-only devices with a 2.5-wt.% LCV-doped BPhen layer was 4.02 V. The highest values of the current density and the luminance of the p-i-n OLEDs were 429.8 mA/cm(2) at 7.0 V and 10,950 cd/m(2) at 6.8 V, respectively. The turn-on voltage and the power efficiency of the p-i-n OLEDs with a HAT-CN layer and a LCV-doped BPhen ETL were 2.46 V and 2.76 lm/W, respectively. The enhancement of the power efficiency and the decrease in the turn-on voltage of the p-i-n OLEDs were attributed to the improvement of the hole and electron injections due to the utilization of the p-type HAT-CN and the n-type LCV-doped BPhen layers.
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