Multilevel charging and discharging mechanisms of nonvolatile memory devices based on nanocomposites consisting of monolayered Au nanoparticles embedded in a polystyrene layer
- Authors
- Yun, Dong Yeol; Lee, Nam Hyun; Kim, Hak Seong; Lee, Sang Wook; Kim, Tae Whan
- Issue Date
- Jan-2014
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.104, no.2, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 104
- Number
- 2
- Start Page
- 1
- End Page
- 3
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/160956
- DOI
- 10.1063/1.4861928
- ISSN
- 0003-6951
- Abstract
- Capacitance-voltage (C-V) curves for Al/Au nanoparticles embedded in a polystyrene (PS) layer/p-Si devices at 300 K showed a metal-insulator-semiconductor behavior with flat-band voltage shifts of the C-V curves due to the existence of charge trapping. Memory windows between 2.6 and 9.9 V were observed at different sweep voltages, indicative of multilevel behavior. Capacitance-time measurements demonstrated that the charge-trapping capability of Au nanoparticles embedded in a PS layer was maintained for retention times larger than 1 x 10(4) s without significant degradation. The multilevel charging and discharging mechanisms of the memory devices are described on the basis of the experimental results.
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