Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaOx/NiSi device
DC Field | Value | Language |
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dc.contributor.author | Park, Jingyu | - |
dc.contributor.author | Jeon, Heeyoung | - |
dc.contributor.author | Kim, Hyunjung | - |
dc.contributor.author | Jang, Woochool | - |
dc.contributor.author | Seo, Hyungtak | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-07-16T06:48:12Z | - |
dc.date.available | 2022-07-16T06:48:12Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2014 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161056 | - |
dc.description.abstract | In this study, Ni/TaOx/NiSi and Ni/TaOx/Ta/TaOx/NiSi devices were fabricated, and the resistive switching (RS) behaviors were investigated. A 2 nm-thick Ta metal layer was deposited between two TaOx films to form a Ni/TaOx/T/TaOx/NiSi stack, which was analyzed using TEM. Based on a linear scale I-V curve and an R-V graph, both devices showed conventional bipolar conductive bridge random access memory (CBRAM) characteristics with formation/rupture of Ni conductive filaments (CFs). The Ta-embedded device showed lower forming/SET voltages and initial resistance due to the reduced effective thickness of TaOx films due to the inserted Ta metal layer. In addition, the Ta-embedded device exhibited improved endurance and resistance distribution due to suppression of the random formation of Ni CFs. In this study, Ni/TaOx/NiSi and Ni/TaOx/T/TaOx/NiSi devices were fabricated, and the resistive switching (RS) behaviors were investigated. A 2 nm-thick Ta metal layer was deposited between two TaOx films to form a Ni/TaOx/T/TaOx/NiSi stack, which was analyzed using TEM. Based on a linear scale I-V curve and an R-V graph, both devices showed conventional bipolar conductive bridge random access memory (CBRAM) characteristics with formation/rupture of Ni conductive filaments (CFs). The Ta-embedded device showed lower forming/SET voltages and initial resistance due to the reduced effective thickness of TaOx films due to the inserted Ta metal layer. In addition, the Ta-embedded device exhibited improved endurance and resistance distribution due to suppression of the random formation of Ni CFs. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaOx/NiSi device | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1039/c4ra10446c | - |
dc.identifier.scopusid | 2-s2.0-84913558255 | - |
dc.identifier.wosid | 000345655600080 | - |
dc.identifier.bibliographicCitation | RSC ADVANCES, v.4, no.105, pp.61064 - 61067 | - |
dc.relation.isPartOf | RSC ADVANCES | - |
dc.citation.title | RSC ADVANCES | - |
dc.citation.volume | 4 | - |
dc.citation.number | 105 | - |
dc.citation.startPage | 61064 | - |
dc.citation.endPage | 61067 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.subject.keywordPlus | METALLIC FILAMENT | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | CU | - |
dc.identifier.url | https://pubs.rsc.org/en/content/articlelanding/2014/RA/C4RA10446C | - |
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