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Improving GaInP/GaAs/Ge triple junction solar cell efficiency with reduced growth temperature of GaAs base layer
- Authors
- Kang, Ho Kwan; Jim, Dong Hwan; Kim, Chang Zoo; Song, Keun Man; Park, Wonkyu; Ko, Chul Gi; Park, Jinsub; Kim, Hogyoung
- Issue Date
- Dec-2013
- Publisher
- American Institute of Physics
- Keywords
- Crystalline quality; GaInP; Ge; Solar cells; Triple junction
- Citation
- AIP Conference Proceedings, v.1566, pp 419 - 420
- Pages
- 2
- Indexed
- SCOPUS
- Journal Title
- AIP Conference Proceedings
- Volume
- 1566
- Start Page
- 419
- End Page
- 420
- ISSN
- 0094-243X
- Abstract
- Using GaInP as a nucleation layer, the Ge bottom cell was fabricated with a proper junction depth in the p-n junction and this Ge bottom cell was used to grow GaInP/GaAs/Ge triple junction solar cells. Then, the growth temperature of p-type GaAs base layer in the middle cell was investigated as a means of improving the solar cell efficiency. The solar cell grown at 550°C produced the improved efficiency compared to that grown at 680°C. The result suggests that the growth temperature of GaAs base layer is an important factor to improve the cell efficiency, related to the thermal stability of previously formed bottom cells.
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Related Researcher
- Park, Jinsub
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)