Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing
DC Field | Value | Language |
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dc.contributor.author | Yoo, Dongjun | - |
dc.contributor.author | Choi, Moon Suk | - |
dc.contributor.author | Heo, Seung Chan | - |
dc.contributor.author | Chung, Chulwon | - |
dc.contributor.author | Kim, Dohyung | - |
dc.contributor.author | Choi, Changhwan | - |
dc.date.accessioned | 2022-07-16T07:36:40Z | - |
dc.date.available | 2022-07-16T07:36:40Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 1598-9623 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161566 | - |
dc.description.abstract | Zinc sulfide (ZnS) thin films were deposited by radio-frequency (RF) magnetron sputtering. The effects of the process parameters such as deposition time and RF-power, as well as of post deposition annealing under oxygen containing atmospheres, on the material properties of ZnS films have been investigated. X-ray diffraction analysis reveals out that the as-deposited ZnS films preferred (002) hexagonal wurtzite and (111) cubic zinc blend (111) at 28.60A degrees, while a thicker ZnS film has additional hexagonal wurtzite (100), (110), and (200) planes coexisting with the preferred oriented-planes, suggesting that the thickness is dependent on the growth of ZnS. After annealing, ZnO phases were detected, indicating island-like grain growth on the surface of the ZnS film. By increasing the deposition time and the RF power, the optical band gap energy (E-g) of the ZnS film changes from 4.13 to 3.87 eV, indicating the presence of lower E-g with thicker ZnS film. The lower E-g (similar to 3.27 eV) value of the annealed films is attributed to the ZnO transition. Unlike bulk ZnS material (Zn/S similar to 1.08), deposited ZnS thin film has Zn-rich and S-deficient composition (Zn/S similar to 1.28). However, the Zn/S ratio is closer to the ideal value when there is a longer deposition time or higher RF-power. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.title | Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Choi, Changhwan | - |
dc.identifier.doi | 10.1007/s12540-013-6026-7 | - |
dc.identifier.scopusid | 2-s2.0-84888416071 | - |
dc.identifier.wosid | 000327080600021 | - |
dc.identifier.bibliographicCitation | Metals and Materials International, v.19, no.6, pp.1309 - 1316 | - |
dc.relation.isPartOf | Metals and Materials International | - |
dc.citation.title | Metals and Materials International | - |
dc.citation.volume | 19 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 1309 | - |
dc.citation.endPage | 1316 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001818764 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordPlus | THERMAL-OXIDATION | - |
dc.subject.keywordPlus | ZNS FILMS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | LIGHT | - |
dc.subject.keywordPlus | GLASS | - |
dc.subject.keywordAuthor | ZnS | - |
dc.subject.keywordAuthor | solar cells | - |
dc.subject.keywordAuthor | annealing | - |
dc.subject.keywordAuthor | phase transformation | - |
dc.subject.keywordAuthor | scanning electron microscopy | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s12540-013-6026-7 | - |
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