The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties
DC Field | Value | Language |
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dc.contributor.author | Ok, Kyung-Chul | - |
dc.contributor.author | Park, Yoseb | - |
dc.contributor.author | Chung, Kwun-Bum | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2022-07-16T07:41:29Z | - |
dc.date.available | 2022-07-16T07:41:29Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2013-11 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/161599 | - |
dc.description.abstract | Tantalum (Ta) is suggested to act as an electron donor and crystal phase stabilizer in titanium oxide (TiOx). A transition occurs from an amorphous state to a crystalline phase at an annealing temperature above 300 degrees C in a vacuum ambient. As the annealing temperature increases from 300 degrees C to 450 degrees C, the mobility increases drastically from 0.07 cm(2)/Vs to 0.61 cm(2)/Vs. The remarkable enhancement of thin film transistor performance is suggested to be due to the splitting of Ti 3d band orbitals as well as the increase in Ta5+ ions that can act as electron donors. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | The effect of Ta doping in polycrystalline TiOx and the associated thin film transistor properties | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1063/1.4831783 | - |
dc.identifier.scopusid | 2-s2.0-84888405342 | - |
dc.identifier.wosid | 000327590400081 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.103, no.21, pp.1 - 5 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 103 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | TANTALUM | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.identifier.url | https://aip.scitation.org/doi/10.1063/1.4831783 | - |
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